(China (Mainland))
Product Summary
The 2sb772 is PNP silicon transistor. It is suited for the output stage of 3W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Parametrics
2sb772 absolute maximum ratings: (1)Storage Temperature:-55℃ to +150℃; (2)Junction Temperature:150℃ Maximum ; (3)Maximum Power Dissipation:Total Power Dissipation (TA = 25℃):1.0 W ,Total Power Dissipation (TC = 25℃):10W ; (4)Collector to Base Voltage:-40V ; (5)Collector to Emitter Voltage:-30V ; (6)Emitter to Base Voltage:-5.0V ; (7)Collector Current (DC):-3.0A ; (8)Collector Current (pulse):-7.0A.
Features
2sb772 features: (1)Low saturation voltage VCE(sat) ≤ -0.5 V (IC = -2.0 A, IB = -0.2 A) ; (2)Excellent hFE linearity and high hFE hFE2 = 60 to 400 (VCE = -2.0 V, IC = -1.0 A) ; (3)Less cramping space required due to small and thin package (TO-126 (MP-5)) and reducing the trouble for attachment to a radiator. No insulator bushing required.
Diagrams
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 2SB772T |
Other |
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Data Sheet |
Negotiable |
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2SB772S |
Other |
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Data Sheet |
Negotiable |
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2SB772D |
Other |
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Data Sheet |
Negotiable |
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2SB772 |
STMicroelectronics |
Transistors Bipolar (BJT) PNP Medium Power -30VCEO -5VBEO |
Data Sheet |
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